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B.V. Zhmud, W.A. House, F.H. Denison
RELEASE KINETICS AND CONCENTRATION PROFILE
OF DISSOLVED SILICON IN COMPACTED SEDIMENTS
J. Chem. Soc., Faraday Trans., 93 (1997) 3473.
Abstract
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The kinetics of release of dissolved silicon from compacted sediments
under close to natural conditions were studied on the basis of a semi-infinite diffusion
model taking into account the dissolution of the support. A general theoretical framework
suitable for the description and modelling of such processes was developed.
The basic equation describing release of silicon from sediments is
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(1) |
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where D is the diffusion coefficient of dissolved silicon in the pore water, k is the dissolution
rate constant, cin is the initial concentration of silicon in the pores measured
at the beginning of the experiment, γ(t) is the concentration of silicon in the overlying
solution recorded in the course of the experiment, and cs is its saturation
concentration at the pH of the experiment. The x-axis is normal to the sediment/solution interface and
directed to the sediment. The general solution to the above equation can be represented in the form
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(2) |
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G being the Green function. To determine γ(t), the mass balance requirement
should be imposed,
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(3) |
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where l is the depth of the overlying solution and p is the porosity of the sediment. By combining
eqn.(2) and (3), the desired time-dependence of silicon concentration is obtained,
where
L -1
denotes the inverse Laplace transform.
Based on the above equations, the dynamics of the concentration profile of dissolved silicon
in the sediment phase was calculated (see Figure to the right), and by adjusting the model
parameters to an extensive set of experimental data on concentration profiles measured in
natural sediments and in a fluvarium channel-bed, the diffusion coefficient and generation
rate constant of dissolved silicon were determined.
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